Intel's Tri-gate transistor development: from finFET concepts to Tri-gate transistors ... with Mark Bohr of Intel - part I
Posted on: 12-Dec-2012
Page Views: 9968
The development of Intel's Tri-gate transistor from concept to fully functional integrated device was not something that came overnight. It took years of dedicated research and development to pull it off. My guest, Mark T. Bohr, Sr. Fellow and Director of Process Architecture & Integration at Intel, was here for a case study on this to show how a great company approaches innovation. In Part I we cover the early years of research from 1989 and the first finFET paper up to the early 2000's, examining how Intel's approach to research works. In Mark's description of why a Tri-gate finFET structure was chosen over the original Bi-gate and the challenges of both, we gain insight into TMG's decision making process.
weVISION is a series of video interviews of visionaries by G Dan Hutcheson, his career spans more than thirty years, in which he became a well-known as a visionary for helping companies make businesses out of technology. This includes hundreds of successful programs involving product development, positioning, and launch in Semiconductor, Technology, Medicine, Energy, Business, High Tech, Environment, Electronics, healthcare and Business divisions.
Short URL: http://electronics.wesrch.com/weqEL1WKF7
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