Technical innovations, particularly in NAND flash memory design are key enablers of multi-level cell NAND flash memories, especially 3-bit per cell and 4-bit per cell technologies.
Forward Insights' latest report, Key NAND Flash Memory Design IP identifies important NAND flash memory intellectual property related to sensing architectures, source voltage noise compensation, programming algorithms, disturbs reduction, temperature compensation, high voltage switch, coding schemes and error correction codes from Hynix, Micron, Samsung, SanDisk, STMicroelectronics and Toshiba.
For further information on this report, please contact:
Gregory Wong
Tel: +1-408-565-8207
greg@forward-insights.com
About Forward Insights
Forward Insights is a market and technical research and consultancy offering unique and strategic perspectives on semiconductor memories, emerging memory technologies and solid state storage.
www.forward-insights.com
