FOR IMMEDIATE RELEASE,
May 16, 2007

For more information, contact:
Christopher J. Rauh
VP Sales & Marketing
919-424-5181
crauh@nitronex.com

Kara Thompson
Sales and Marketing Assistant
919-424-5222
kthompson@nitronex.com

High electron mobility transistor addresses 2.5GHz WiMAX markets…

NITRONEX ANNOUNCES 100W GAN ON SI
POWER TRANSISTOR FOR WIMAX APPLICATIONS

Durham, N.C. (May 16, 2007) — Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a 28V, 100W Gallium Nitride high electron mobility transistor (HEMT) ideal for WiMAX applications. Designed using Nitronex’s patented SIGANTIC“ NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 - 2.7GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM _, 8 burst, 3.5MHz channel bandwidth, 10.3dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5dB of gain (typical), 21% efficiency, and less than 2.5% EVM - all at >10W of power.

“The NPT25100 is a device our customers are eager to receive,” said Chris Rauh, VP of Sales and Marketing for Nitronex. “The market for 2.5GHz WiMAX solutions is accelerating and the NPT25100 HEMT device will deliver the kind of price and performance our customers need.”

The NPT25100 is packaged in a thermally enhanced Copper Moly Copper package that will be offered in both bolt-down and pill versions. Samples and application boards will be available starting in June and full production qualification is expected in July. The 1000 piece suggested price for the NPT25100 is $90.

The NPT25100 is lead-free and RoHS compliant.

For more information about Nitronex’s NPT25100 GaN on Si power transistor, contact Nitronex at 2305 Presidential Drive, Durham, NC 27703; call 919-807-9100; or e-mail info@nitronex.com.

About Nitronex
Specializing in the development and manufacturing of gallium nitride (GaN) RF power devices, Nitronex is the global leader in high-performance GaN on silicon (GaN on Si) RF power transistors for the commercial wireless infrastructure, broadband and military markets. Based on its patented SIGANTIC® process — gallium nitride on silicon technology — Nitronex is at the forefront of commercializing GaN technology for RF applications. The company’s ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry.
Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 19 patents with 19 others pending.

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