TOSHIBA EXPANDS UMOS V-H SERIES HIGH-EFFICIENCY SWITCHING MOSFETS FOR SYNCHRONOUS DC-DC CONVERTERS

Additional UMOS V-H Series Power MOSFETs Feature Higher Drain Current and Lower On-State Resistance to Improve Power Efficiency in Synchronous DC-DC Converters

IRVINE, Calif., Oct. 15, 2007 – Toshiba America Electronic Components, Inc. (TAEC)* has added two new devices to its UMOS V-H Series high-speed switching MOSFETs to provide higher drain current (ID), and lower on-state resistance (RDSON), combined with the power efficiency advantages of the other members of the product family. Developed by Toshiba Corp. (Toshiba), the TPCA8012-H and TPCA8019-H n-channel MOSFETs extend the UMOS V-H Series with higher drain current of 40 Amps (A) and 45A (max.) and lower RDSONof 4.9 milliohms and 3.1milliohms, respectively (max. value at VGS = 10V). The UMOS V-H Series MOSFETs are targeted for use in synchronous DC-DC converters in power supplies for servers, desktop and mobile computers, and portable electronics devices.

“Our UMOS V-H Series MOSFETs are designed to reduce the size and improve the power efficiency of synchronous rectification DC-DC converters for notebook PCs, servers and on-board power supplies. The first members of the series have been well received, and these new devices provide higher performance options for power supply designers,” said Jeff Lo, business development manager, Discrete Power Products, for TAEC.

The new devices join nine other members of the UMOS V-H Series to provide a range of drain current, drain-source voltage, and a selection of other performance characteristics to meet various application requirements. Compared to previous process technology from Toshiba, the UMOS V-H Series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous DC-DC converter, including lower on-state resistance (RDSON) and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance (Cgd), lower Cgd/Cgs ratio, lower gate resistance (Rg), and optimized gate threshold voltage. On the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge (QSW) and gate resistance (Rg). For more information on the UMOS V-H Series, please visit http://www.toshiba.com/taec/adinfo/umos-v/.

The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5.0mm x 6.0mm to help minimize board area and device temperature. The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and a RDSON of 4.9milliohms (max. value at VGS = 10V). TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating, with a maximum drain current of 45A and an RDSON of 3.1milliohms (max. value at VGS = 10V). The SOP Advance package from Toshiba features a 41 percent lower profile than a standard SOP-8 package, and enables approximately 47 percent higher power dissipation.

UMOS V Overview

UMOS V is a fifth generation process technology in the Toshiba fast switching series. It utilizes a trench gate structure that combines low RDSON with fast switching. Low gate resistance, a lower gate-to-drain capacitance (Cgd), and lower Cgd/Cgsratio also help reduce the amount of self-turn on loss.

Pricing and Availability

Samples of the TPCA8012-H and TPCA8019-H are available now, priced at $0.45 and $0.60, respectively. Production quantities are available now.

Technical Specifications for New Toshiba UMOS V-H Series Power MOSFETs

Part Number

VDSS(V) (max.)

ID (A)

(max.)

Package

Type

RDS(on)(MAX.)

milliohms

Crss (pF)

Ciss (pF)

4.5V

10V

Vds=10V, Vgs=0V, f=1MHz

TPCA8012-H

30

40

SOP Advance 5.0mm x 6.0mm x 0.95mm

N-ch single

6.8

4.9

170

2900

TPCA8019-H

30

45

4.1

3.1

284

4614

Toshiba’s Discrete Products

Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: “2006 Worldwide Semiconductor Market Share Report,” Gartner, released April 2007). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company’s discrete devices are designed to meet the growing demand for high-performance and lower voltages in today’s wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, medical

tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless

components that make possible today’s leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s fourth largest semiconductor manufacturer (iSuppli, World’s Top Semiconductor Supplier Rankings in 2006). For additional company and product information, please visit http://www.toshiba.com/taec/. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used

within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s “Handling Guide for Semiconductor Devices,” or “Toshiba Semiconductor Reliability Handbook.” This information is available at www.chips.toshiba.com, or from your TAEC representative.

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Editors Note: Reader inquiries please publish: Tech.Questions@taec.toshiba.com.

Photos available for download at http://www.toshiba.com/taec/news/press_releases/2007/pwr_07_496.jsp

Agency Contact:

Jan Johnson

MultiPath Communications

(714) 633-4008

jan@multipathcom.com

Company Contact:

Poloi Lin

Toshiba America Electronic Components, Inc.

(949) 623-3098

poloi.lin@taec.toshiba.com

Agency Contact:

Jan Johnson

MultiPath Communications

(714) 633-4008

jan@multipathcom.com

Company Contact:

Poloi Lin

Toshiba America Electronic Components, Inc.

(949) 623-3098

poloi.lin@taec.toshiba.com