Electronics Home»Presentations/Papers»

Metal Oxide Hetero Junction Operation Nonvolatile Memory - MOHJO, Electronics

Metal Oxide Hetero Junction Operation  Nonvolatile Memory - MOHJO Metal Oxide Hetero Junction Operation Nonvolatile Memory - MOHJO

In this electronics presentations show the next generations for Nonvolatile Memory. Role of Electrode Materials in Bipolar Resistive Switching Devices. Classification of MOHJO devices with device structure and free energy.

A positive V pulse will move the oxygen ion into the vacancies Located near the metal electrode interface and patching otherwise breaking M-O-M-O chains and thereby decrease the resistance while the negative pulse will movie the oxygen vacancies into the interface region, and piling them up at metal interface, and increase the resistance. In site TEM Observation of Oxygen Vacancy Motion. 4DS proprietary process yields columnar polycrystalline PCMO which is fully CMOS compatible & high throughput.

Metal Oxide Heterojunction Characteristics of MOHJO two type devices first type device have a fast response time, good retention, good endurance but poor tunable their have difference in second type device which have a excellent tunable and retention excellent.

Loading
Loading Social Plug-ins...
Save to myLibrary Save this page Post page as Slide Download PDF
Go to Page #  [ View Slideshow ] Page of 14
Page(s): 1 2 3 4 5 6 7 8 9 10 11 12 13 14
 
Author: Lee Cleveland (Fellow) | Visits: 1788 | Page Views: 1843
Domain:  High Tech Category: Semiconductors Subcategory: Memory 
Upload Date: 2014-04-07 01:41:48  
Link Back: Flash Memory Summit
Short URL: http://electronics.wesrch.com/pdfEL1SE1UU8KZDQ

Loading
Loading...



px *        px *

* Default width and height in pixels. Change it to your required dimensions.


 
Subscribe
x