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Reliability and Yield Issues in Nano-Scale Technologies, High Tech

Reliability and Yield Issues in Nano-Scale Technologies Reliability and Yield Issues in Nano-Scale Technologies

Paper covers: MOS Devices and Circuits. Sources & Types of Variations. scaling.

Line Edge Roughness (LER). Discrete doping. Discrete oxide thickness.

R and V body distributions. Self-heating. Hot spots.

IR drops. Layout Dependent Systematic Variations. Design rules effect on Performance.

Reliability & Yield. RDF: Random Dopant Fluctuations. HCI: Hot Carrier Stress.

Electromigration. Transient Faults. RTS and Digital Circuits.

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Important Tags: 

Line Edge Roughness (LER) Discrete doping Discrete oxide thickness R and V body distributions

Author: Prof Gilson Wirth, UFRGS (Fellow) | Visits: 1114 | Page Views: 1122
 
Domain:  High Tech Category: Semiconductors Subcategory: Yield Management 
Upload Date: 2nd-Jun-2010  Click On Above Link To See More
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