Semiconductors: nano-electronic “materials” details, High Tech, Page 26
Semiconductors: nano-electronic “materials” details | 
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Future for Compound Semiconductors is strong!!!
•InP HEMT (transistors) operate above 1THz - Northrop
Grumman Inc.
•InP Double Heterostructure Bipolar Transistors (DHBT)
operate to as high as 865 GHz! - Milton Feng et al
al.
•InP Double Heterostructure Bipolar Transistors (DHBT)
circuits operate to as high as 310 GHz! - HRL Inc.
•Demonstration of InP Optical Transistors and Lasers that
can directly integrate into fiber optic systems at 100's of GHz.
- Milton Feng et al.
•SiGe HBTs operate to 300 GHz (500 GHz at cryogenic
temperatures) - IBM / Dr. John Cressler et al.
•InSb based devices offer even more promise for low power
high speed (transistor mobility of ~30,000 compared to ~100
in Si MOSFET).
MOSFET)
•GaN based devices offer 100x improvement in power
density!
•SiC based devices offer Megawatts switching capability
SiC capability.
•Will likely see a surge in “Hybrid Si - ??? Technologies”
January 5, 2011 Dr. W. Alan Doolittle 26
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