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Semiconductors: nano-electronic “materials” details, High Tech, Page 19

Semiconductors: nano-electronic “materials” details

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2008 Vintage Intel Microprocessor
45 nm
(~200 atoms)
Hafnium-
•High K Gate Dielectric: Silicate
(Oxide)
•K of SiO2~3.9< Hafnium Silicate ~? < HfO2~ 22
•Deviation from SiO2 required reverting back to Metal
Gates (no Poly-silicon)
•Limited Speed of Silicon partially overcome by using
SiGe to “mechanically strain” Si channel resulting in
Energy Band structure modification that i
E B d difi i h increases
electron/hole mobility.
Strained Si
(lower bandgap
- higher
mobility)




January 5, 2011 Dr. W. Alan Doolittle 19