Electronics Home»Thin-body FinFET Powers ICs To Beyond 10nm, High Tech, Page 11

Thin-body FinFET Powers ICs To Beyond 10nm, High Tech, Page 11

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See entire paper: http://electronics.wesrch.com/pdfEL1SE1OQNNDZN
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Page content:

Two Improvements Since 1999

• 2002 FinFET with thin oxide
on fin top.
F.L.Yang et al. (TSMC) 2002 Gate
IEDM, p. 225.
STI Si
STI
• 2003 FinFET on bulk
substrate.
T. Park et al. (Samsung) 2003
VLSI Symp. p. 135.

11
Chenming Hu, February 2012

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