180nm High-Voltage CMOS Process, High Tech, Page 4
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Page content: H18 device list Modifications to existing devices for HV process: Existing 7RF Devices Thin oxide NFETi/PFETi 1.8V in HV wells Thin oxide NFET/PFET 1.8V Medium oxide NFETi/PFETi 5V in HV wells Medium oxide NFET/PFET 5V High Vt NFETi/PFETi 1.8V in HV wells High Vt NFET/PFET 1.8V N+ diffusion resistor in HV well P+ diffusion resistor in HV well N+ diffusion resistor P+ diffusion resistor N+ poly resistor P+ poly resistor New Devices: K1 BEOL resistor Thin oxide NFETi/PFET 20V High resistivity poly resistor Thick oxide NFETi/PFET 20V precision poly resistor Thick oxide NFETi/PFET symmetric 20V Single Nitride MIM Medium oxide NFETi 20V Dual Nitride MIM Medium oxide NFETi/PFET 25V Thin oxide NFETi/PFET 50V HighK MIM Medium oxide NFETi/PFET 50V PCDCAP thin ox Thick NFETi/PFET 50V Vertical parallel plate capacitor (VNcap) Thick NFETi/PFET symmetric 50V Schottky Barrier Diode 3 terminal JFET Efuse Parasitic VPNP (high V) Bondpad Parasitic VNPN (isolated) NWell resistor in HV well PWell resistor in HV well High Voltage VNcap4 2010 austriamicrosystems | ||||||
